Physical analysis of gate oxide breakdown in nanoelectronics,2012.11.2
作者: 发布日期:2012-11-02


by Prof. Pey Kin Leong  

the Singapore University of Technology and Design



      How can a metal-oxide-semiconductor (MOS) transistor suffered from multiple dielectric breakdowns with severe structural damages (e.g., local melting and metal migration) remain functional? In this talk, I would share with you various breakdown related defects in nanoscale transistors used in state-of-the-art computer chips and mobile devices. It is amazing to realize that even a transistor has suffered a catastrophic failure, it can still be functional with degraded performance. I will show the first time a real-time physical analysis of a breakdown in an ultrathin dielectric of less than a few nanometers (1 nm = 10-9 m).


东南大学微电子机械系统教育部重点实验室 版权所有
地址:南京四牌楼二号南高院(东门)MEMS教育部重点实验室 电话:025-83794642-8840 E-mail:jiangmx@seu.edu.cn