Interface Physics in Silicon Nanodevices,2014.11.28
作者: 发布日期:2014-11-28

byM.K. Radhakrishnan, Director, NanoRel Technical Consultancts





    Device reliability is the resultant of various analyses of the design, process and product and understanding innumerable phenomenon to curb the extension of even atomic level defects, especially when the dimensions are at nanometer level. Ways to understand the physical phenomenon with which devices mal-function become more striving in solving both the device and process problems. One of the most important and challenging area is interfaces and comprehending the related issues. Studies on two sets of interfaces, interfaces of basic transistor structure and interconnect interfaces, have shown un-assumable problems in device reliability studies. An overview of such recent studies to understand the conduction mechanisms, microstructural damages, interface interactions as well as the physical effects in the structural integrity in nano silicon devices will be discussed in this talk.

东南大学微电子机械系统教育部重点实验室 版权所有
地址:南京四牌楼二号南高院(东门)MEMS教育部重点实验室 电话:025-83794642-8840